Abstract
Here we present a micron scaled piezoelectric energy harvester fabricated in a commercial Complementary Metal Oxide Semiconductor (CMOS) technology. The device is a multilayer cantilever clamped on one end that utilizes interdigitated transducers (IDTs) to collect charge from a zinc oxide (ZnO) piezoelectric layer. Hence the cantilever beam operates in the d(33) mode in order to produce more energy than a d(31) structure. Finite element modeling and simulations are performed to analyze the voltage on the IDTs for various frequencies with and without the addition of a proof mass. The results presented demonstrate that commercial FEM software can help designers to determine parameters such as material thickness, proof mass, and IDT dimensions for novel piezoelectric energy harvester devices pre-fabrication.
