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Selex ES GaN technology: Improvements, results and R&D approach for 0.5μm and 0.25μm process
Conference proceeding

Selex ES GaN technology: Improvements, results and R&D approach for 0.5μm and 0.25μm process

C Lanzieri, A Pantellini, P Romanini, F Crispoldi, A Nanni and R Graffitti
2014 9th European Microwave Integrated Circuit Conference, pp.229-232
2014-10

Abstract

Radio frequency Performance evaluation Source Field Plate Current measurement Logic gates GaN-HEMT Reliability Gallium nitride Stress

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