The effects of edge defects on the switching characteristics of bit patterned media

E Chunsheng; V Parekh; J.O Rantschler; P Ruchhoeft; S Khizroev; D Litvinov

doi:10.1109/NANO.2007.4601220

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Conference proceeding

The effects of edge defects on the switching characteristics of bit patterned media

E Chunsheng, V Parekh, J.O Rantschler, P Ruchhoeft, S Khizroev and D Litvinov

2007 7th IEEE Conference on Nanotechnology (IEEE NANO), pp.339-340

2007-08

DOI: https://doi.org/10.1109/NANO.2007.4601220

Abstract

Atomic force microscopy

Coercive force

Microscopy

Nanostructures

Object oriented modeling

Periodic structures

Switches

We present the results of micromagnetic studies on realistic patterning defects in perpendicularly oriented magnetic thin films. Both undercut and line edge roughness are investigated systematically with simulations using simple test structures to see the effect of the side wall angle, the roughness amplitude on a nanostructureiquests switching field, and the roughness period on mathematically tractable figures. We then run simulations of hysteresis loops of actual 200 nm diameter nanostructures using AFM images to define the structure boundary and compare the results to MFM images of DC demagnetized dots.

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Title: The effects of edge defects on the switching characteristics of bit patterned media
Creators: E Chunsheng - University of Houston
V Parekh - University of Houston
J.O Rantschler - University of Houston
P Ruchhoeft - University of Houston
S Khizroev - University of California, Riverside
D Litvinov - University of Houston
Publication Details: 2007 7th IEEE Conference on Nanotechnology (IEEE NANO), pp.339-340
Publisher: IEEE
Academic Unit: CoE - Electrical & Computer Engineering; College of Engineering
Language: English
Resource Type: Conference proceeding
Record Identifier: 991031714166302976