Abstract
With the advent of artificial intelligence (AI) in computational devices technology, various synaptic array architectures are proposed for neuromorphic computing applications. Among them, the non-volatile memory (NVM) architectures are very promising for their small cell size, ultra-low energy consumption, and capability for large parallel data processing through 3D configurations capable of multilevel signal processing. Herein, the viability of such magnetic tunnel junction (MTJ)-based synaptic devices via fabrication and characterization of multi-junction spintronic devices is demonstrated, with the experimental results supported through micromagnetic simulations.
