Band Gap Insensitivity to Large Chemical Pressures in Ternary Bismuth Iodides for Photovoltaic Applications

Journal article

X. Huang, S. Huang, P. Biswas and R. Mishra

Journal of Physical Chemistry C, Vol.120(51), pp.28924-28932

2016

Files and links (1)

url

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85008450639&doi=10.1021%2facs.jpcc.6b09567&partnerID=40&md5=75266677479b751d05ea11fabe82511bView

1 Record Views

These are selected metrics from InCites Benchmarking & Analytics tool, related to this output

Citation topics: 2 Chemistry; 2.298 Perovskite Solar Cells; 2.298.761 Perovskite Solar Cells
Web Of Science research areas: Chemistry, Physical; Materials Science, Multidisciplinary; Nanoscience & Nanotechnology
ESI research areas: Chemistry

This output has contributed to the advancement of the following goals:

Source: InCites

Title: Band Gap Insensitivity to Large Chemical Pressures in Ternary Bismuth Iodides for Photovoltaic Applications
Creators: X. Huang - Washington University in St. Louis
S. Huang - Washington University in St. Louis
P. Biswas - Washington University in St. Louis
R. Mishra - Washington University in St. Louis
Publication Details: Journal of Physical Chemistry C, Vol.120(51), pp.28924-28932
Comment: Export Date: 11 April 2022
Academic Unit: College of Engineering Administration; Leadership Department; College of Engineering
Resource Type: Journal article
Record Identifier: 991031686580402976