High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy

Journal article

Peer reviewed

L. K Li, B Turk, W. I Wang, S Syed, D Simonian and H. L Stormer

Applied physics letters, Vol.76(6), pp.742-744

2000-02-07

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Title: High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy
Creators: L. K Li
B Turk
W. I Wang
S Syed
D Simonian
H. L Stormer
Publication Details: Applied physics letters, Vol.76(6), pp.742-744
Academic Unit: College of A&S; A&S - Physics
Language: English
Resource Type: Journal article
Record Identifier: 991031599312502976