Abstract
In this paper Gate Material Engineered (GME) Gate-Stack (GS) silicon nanowire Schottky-Barrier (SB) Gate All Around (GAA) MOSFET and Single Material Gate Stack Schottky-Barrier Source/Drain Gate All Around (SM-GS-SB-S/D GAA) structures are proposed for low- power wireless applications. The Analog/RF performance for wireless applications of these devices are demonstrated. The effect of Schottky-Barrier (Metal) S/D is studied for Single Metal (SM)–SB-GAA, (Dual Metal) DM-SB-GAA, SM-GS-SB-GAA and GME-GS-SB-GAA MOSFETs, and it is found that GME-GS-SB-GAA MOSFET with metal drain source shows much improved performance in terms of transconductance (gm), output conductance (gd), Early Voltage (VEA), Maximum Transducer Power Gain, cut-off frequency (fT), and Ion/Ioff ratio. Further, harmonic distortion for wireless applications is also studied using ATLAS-3D device simulator. Due to low parasitic S/D resistance the metal Source/Drain DM-GS-SB-S/D-GAA MOSFET demonstrates remarkable Ion of~31.8μA/μm and saturation transconductance gm of~68.2μS with improved third order derivative of transconductance gm3.
•High cut-off frequency of Dual Metal-Schottky Barrier-GAA MOSFET: 193GHz.•Highest Ion/Ioff ratio of DM-GS-SB-GAA MOSFET: 9.58×104.•High transconductance of DM-GS-SB-GAA MOSFET: 68.2μS.•Low power VDS=50mV, with suppressed gm3.•Lightly doped channel (NA=1×1016cm−3 ), amalgamation of Dual metal Gate.
