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InGaAsP/InP DH Ridge Waveguide Phase Modulator with High Modulation Efficiency
Journal article

InGaAsP/InP DH Ridge Waveguide Phase Modulator with High Modulation Efficiency

Young Tae Byun, Hwa Sun Park, Sung Jin Kim, Deok Ha Woo, Jong Chang Yi and Yoshiaki Nakano
Guangxué xuébào, Vol.23(z1), pp.289-290
2003
DOI: https://doi.org/10.3321/j.issn:0253-2239.2003.z1.145

Abstract

O4; The P-p-n-N InGaAsP/InP ridge waveguide phase modulator has been fabricated and investigated at a wavelength of 1550nm. The phase modulation efficiency measured by the Fabry-Perot resonance method is as high as 34°/V.mm for TE mode. The QEO effect becomes dominant from -4V to -8V.

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