Investigations on the Nitride Interface Engineering at HfO2/Ge stacks for MOS devices

G Venkata Rao; M Kumar; T.V Rajesh; D.V Rama Koti Reddy; D Anjaneyulu; B Sainath; S.V Jagadeesh Chandra

doi:10.1016/j.matpr.2017.11.129

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Investigations on the Nitride Interface Engineering at HfO2/Ge stacks for MOS devices

Journal article

Peer reviewed

Investigations on the Nitride Interface Engineering at HfO2/Ge stacks for MOS devices

G Venkata Rao, M Kumar, T.V Rajesh, D.V Rama Koti Reddy, D Anjaneyulu, B Sainath and S.V Jagadeesh Chandra

Materials today : proceedings, Vol.5(1), pp.650-656

2018

DOI: https://doi.org/10.1016/j.matpr.2017.11.129

Abstract

Germanium

Hafnium oxide

Rapid thermal process

Metal-oxide- Semiconductor device

Nitride layer

Passivation layer influenced structural and electrical properties of Ge MOS devices have been reported. Nitride layer was deposited on Ge substrate with rapid thermal annealing before HfO2 deposition. XRD spectra revealed that there was no difractional peak related to HfO2 on Ge substrate after annealing. HREM images showed that there was clear interface at annealed HfO2/Ge stacks. C-V plots revealed that, intentionally formed interfacial nitride layer showed significant improvement in the interface quality between HfO2 and Ge. I-V characteristics showed that Ge devices showed about one order lower leakage current densities than Si devices. All of these observations might be due to the process of surface passivation on Ge substrate.

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Title: Investigations on the Nitride Interface Engineering at HfO2/Ge stacks for MOS devices
Creators: G Venkata Rao - Department of Electronics and Communication Engineering, Lakireddy Bali Reddy College of Engineering,Mylavaram-521 230, Andhra Pradesh, India
M Kumar - Department of Electronics and Communication Engineering, Lakireddy Bali Reddy College of Engineering,Mylavaram-521 230, Andhra Pradesh, India
T.V Rajesh - Department of Electronics and Communication Engineering, Lakireddy Bali Reddy College of Engineering,Mylavaram-521 230, Andhra Pradesh, India
D.V Rama Koti Reddy - Department of Instrument Technology, Andhra University. Visakhapatnam-530003, Andhra Pradesh, India
D Anjaneyulu - Department of Electronics and Communication Engineering, CMR Institute of Technology, Kandlakoya, Medchal, Hyderabad 501401, Telangana, India
B Sainath - Department of Electrnonics and Communication Engineering, Madanapalli Institute of Technology and Science, Madanapalli, Andhra Pradesh, India
S.V Jagadeesh Chandra - Department of Electronics and Communication Engineering, Lakireddy Bali Reddy College of Engineering,Mylavaram-521 230, Andhra Pradesh, India
Publication Details: Materials today : proceedings, Vol.5(1), pp.650-656
Publisher: Elsevier Ltd
Academic Unit: Miller School of Medicine; UMMG Dept of Psychiatry & Behavioral Sciences
Language: English
Resource Type: Journal article
Record Identifier: 991031597822802976