Abstract
Direct coupling of electronic excitations of optical energy via plasmon resonances opens the door to improving gain and selectivity in various optoelectronic applications. We report a new device structure and working mechanisms for plasmon resonance energy detection and electric conversion based on a thin film transistor device with a metal nanostructure incorporated in it. This plasmon field effect transistor collects the plasmonically induced hot electrons from the physically isolated metal nanostructures. These hot electrons contribute to the amplification of the drain current. The internal electric field and quantum tunneling effect at the metal-semiconductor junction enable highly efficient hot electron collection and amplification. Combined with the versatility of plasmonic nanostructures in wavelength tunability, this device architecture offers an ultrawide spectral range that can be used in various applications.
