- Title
- Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector
- Creators
- Huide Wang - Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaShan Gao - Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaFeng Zhang - Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaFanxu Meng - Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaZhinan Guo - Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaRui Cao - Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaYonghong Zeng - Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaJinlai Zhao - Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaSi Chen - Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaHaiguo Hu - Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaYu‐Jia Zeng - Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaSung Jin Kim - Department of Electrical and Computer Engineering University of Miami Coral Gables FL 33146 USADianyuan Fan - Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaHan Zhang - Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic Engineering Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ) Shenzhen University Shenzhen 518060 ChinaParas N Prasad - Institute for Lasers, Photonics, and Biophotonics and Department of Chemistry University at Buffalo The State University of New York Buffalo NY 14260 USA
- Publication Details
- Advanced science, Vol.8(15), pp.2100503-n/a
- Academic Unit
- College of Engineering; CoE - Electrical & Computer Engineering
- Language
- English
- Resource Type
- Journal article
- PMID
- 34014610
- Record Identifier
- 991031613354902976
Journal article
Repression of Interlayer Recombination by Graphene Generates a Sensitive Nanostructured 2D vdW Heterostructure Based Photodetector
Advanced science, Vol.8(15), pp.2100503-n/a
2021-05-20
PMID: 34014610
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11 Record Views
InCites Highlights
These are selected metrics from InCites Benchmarking & Analytics tool, related to this output
- Collaboration types
- Domestic collaboration
- International collaboration
- Citation topics
- 2 Chemistry
- 2.76 2D Materials
- 2.76.544 MoS2
- Web Of Science research areas
- Chemistry, Multidisciplinary
- Materials Science, Multidisciplinary
- Nanoscience & Nanotechnology
- ESI research areas
- Physics
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Source: InCites