Abstract
Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing spin coating method for transparent conducting oxide applications. In this paper, different mol% of Al doped ZnO thin films were prepared and analyzed. And then selected 0.5 mol% Al doped ZnO thin films were prepared for time dependent optical annealing process to know the effects on the structural, optical, and electrical properties. Experimental results showed that optical annealing process affected the microstructure, electrical resistance and optical transmittance of the AZO thin films. X-ray diffraction analysis showed that all films have a (002) peak with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region. Sheet resistance result revealed that optimized RTA improves conductance of films.
